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- 2013
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Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
- 2011
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Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
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Mark
Effects of crystal phase mixing on the electrical properties of InAs nanowires
(
- Contribution to journal › Article
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Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
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Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
(
- Contribution to journal › Article
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Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(
- Contribution to journal › Article
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Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article
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Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
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Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
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Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article